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Electrical characterisation of the p-type dopant diffusion of highly doped AlGaAs/GaAs heterojunction bipolar transistors grown by MOCVD

Electrical characterisation of the p-type dopant diffusion of highly doped AlGaAs/GaAs heterojunction bipolar transistors grown by MOCVD

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© The Institution of Electrical Engineers
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The emitter base threshold voltage is found to be a very efficient method of characterising p-type dopant diffusion in highly doped heterojunction bipolar transistors. Simulated curves have been successfully used to determine the amount of diffusion at different doping levels, showing the ability of MOCVD to achieve a high base doping level without any dopant diffusion.

Inspec keywords: gallium arsenide; heterojunction bipolar transistors; aluminium compounds; semiconductor epitaxial layers; III-V semiconductors; vapour phase epitaxial growth; semiconductor growth; semiconductor doping; chemical vapour deposition

Other keywords: AlGaAs-GaAs; MOCVD; highly doped heterojunction bipolar transistors; HBT; electrical characterisation; characterising p-type dopant diffusion; emitter base threshold voltage; semiconductors; high base doping level

Subjects: Semiconductor doping; Epitaxial growth; Bipolar transistors; II-VI and III-V semiconductors

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