http://iet.metastore.ingenta.com
1887

Novel integral heatsink structures for power MMICs

Novel integral heatsink structures for power MMICs

For access to this article, please select a purchase option:

Buy article PDF
$19.95
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

A standard GaAs ‘foundry’ process has been extended to produce power FET devices developing 6W at S-band. The devices are fabricated in GaAs using ion implanted active layers with a deep acceptor implant. The substrate thickness of the standard GaAs foundary process has been retained, with novel integral heat-sinks under the power devices. This approach ensures high manufacturing yield and compatibility with a well characterised GaAs foundry process.

References

    1. 1)
      • Suffolk, J.R.: `Yield enhancement techniques for GaAs MMICs', Digest of 1989 US Conf. GaAs Manufacturing Technology, October 1989, San Diego, p. 28–32, 24–26.
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19900680
Loading

Related content

content/journals/10.1049/el_19900680
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address