1.53 μm DFB laser on semi-insulating InP substrate with very low threshold current

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1.53 μm DFB laser on semi-insulating InP substrate with very low threshold current

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A novel GaInAsP DFB laser structure on a semi-insulating InP substrate is reported. A new contacting scheme is applied which allows both contacts to be placed on the wafer top while preserving the planar surface of the buried-heterostructure laser diode. CW threshold currents as low as7 mA have been measured at 25°C on 200 μm long devices. These are the lowest values reported for 1.5 μm DFB lasers on semi-insulating substrate.

Inspec keywords: III-V semiconductors; indium compounds; gallium arsenide; distributed feedback lasers; gallium compounds; semiconductor junction lasers

Other keywords: buried-heterostructure laser diode; CW threshold currents; 25 C; InP substrate; DFB laser structure; 200 micron; planar surface; GaInAsP-InP; 1.53 micron; semiconductors; low threshold current; 7 mA; semi-insulating substrate; GaInAsP; contacting scheme

Subjects: II-VI and III-V semiconductors; Semiconductor lasers; Lasing action in semiconductors; Design of specific laser systems

References

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