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Monolithic integration of an InGaAs/GaAs/AlGaAs strained layer SQW LED and GaAs MESFET using epitaxial lift-off

Monolithic integration of an InGaAs/GaAs/AlGaAs strained layer SQW LED and GaAs MESFET using epitaxial lift-off

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The successful realisation of a fully electrically interconnected optical and electronic device using the epitaxial lift-off technique is reported. The OEIC consists of a high output power InGaAs/GaAs/AlGaAs strained QW LED and a GaAS MESFET driver. The surface emitting LED shows an external quantum efficiency of 1.7%. The output/input ratio of the LED-FET combination was 54 μWV−1 sr−1.


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      • Stevens, J., van Daele, P., Demeester, P., Botte, M., Baets, R., Lagasse, P.: `Integration of a LED-array with driver MESFETs on a semi-insulating GaAs substrate using LPE and MOCVD', Proc. 4th European Conf. Integrated Optics, 1987, Glasgow, p. 24–27.
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      • E. Yablonovitch , T. Gmitter , J.P. Harbison , R. Bhat . Extreme selectivity in the lift-off of epitaxial GaAs films. Appl. Phys. Lett. , 2222 - 2224

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