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Monolithic integration of an InGaAs/GaAs/AlGaAs strained layer SQW LED and GaAs MESFET using epitaxial lift-off

Monolithic integration of an InGaAs/GaAs/AlGaAs strained layer SQW LED and GaAs MESFET using epitaxial lift-off

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The successful realisation of a fully electrically interconnected optical and electronic device using the epitaxial lift-off technique is reported. The OEIC consists of a high output power InGaAs/GaAs/AlGaAs strained QW LED and a GaAS MESFET driver. The surface emitting LED shows an external quantum efficiency of 1.7%. The output/input ratio of the LED-FET combination was 54 μWV−1 sr−1.

References

    1. 1)
      • Stevens, J., van Daele, P., Demeester, P., Botte, M., Baets, R., Lagasse, P.: `Integration of a LED-array with driver MESFETs on a semi-insulating GaAs substrate using LPE and MOCVD', Proc. 4th European Conf. Integrated Optics, 1987, Glasgow, p. 24–27.
    2. 2)
      • I. Pollentier , P. Demeester , A. Ackaert , L. Buydens , P. van Daele , R. Baets . Epitaxial lift-off of GaAs LEDs to Si for fabrication of opto-electronic integrated circuits. Electron. Lett. , 193 - 194
    3. 3)
      • A. Yi-Yan , W.K. Chan , T.J. Gmitter , L.T. Florez , J.L. Jackel , E. Yablonovitch , R. Bhat , J.P. Harbison . Grafted GaAs detectors on lithium niobate and glass optical waveguides. IEEE Photonics Lett. , 397 - 398
    4. 4)
      • E. Yablonovitch , T. Gmitter , J.P. Harbison , R. Bhat . Extreme selectivity in the lift-off of epitaxial GaAs films. Appl. Phys. Lett. , 2222 - 2224
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