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Fundamental limitation on large-signal modulation of semiconductor lasers and its implications for lightwave transmission

Fundamental limitation on large-signal modulation of semiconductor lasers and its implications for lightwave transmission

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The performance of single-mode semiconductor lasers under large signal modulation is found to be limited by intraband gain saturation occurring when the on-state output power becomes comparable to the saturation level. The main effect of intraband gain saturation is to increase the fall time associated with the optical pulse. At high bit rates the pulse stretches over several neighbouring bits, thereby affecting the system performance. In the case of 1.55 μm InGaAsP lasers operating at bit rates ∼ 10 Gbit/s intraband gain saturation limits the average power in the range ∼ 10–20 mW for an acceptable system performance.

References

    1. 1)
      • S. Fujita , M. Kitamura , T. Torikai , N. Henmi , H. Yamada , T. Suzaki , I. Takano , M. Shikada . 10 Gbit/s, 100 km optical fibre transmission experiment using high-speed MQW DFB-LD and back-illuminated GaInAs APD. Electron. Lett. , 702 - 703
    2. 2)
      • G.P. Agrawal , N.K. Dutta . (1986) , Long-wavelength semiconductor lasers.
    3. 3)
      • Y. Arakawa , T. Takahashi . Effect of nonlinear gain on modulation dynamics in quantum-well lasers. Electron. Lett. , 169 - 170
    4. 4)
      • G.P. Agrawal . Spectral hole-burning and gain saturation in semiconductor lasers: Strong-signal theory. J. Appl. Phys. , 1232 - 1234
    5. 5)
      • R.S. Tucker . High-speed modulation of semiconductor lasers. J. Lightwave Technol. , 1180 - 1192
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