780 nm low threshold current laser fabricated by two-step, solid-phase Zn diffusion

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780 nm low threshold current laser fabricated by two-step, solid-phase Zn diffusion

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A Zn diffusion stripe laser is fabricated by the metalorganic chemical vapour deposition and the open-tube, two-step, solid-phase diffusion technique. The threshold current is 9.4 mA and the lasing wavelength is 780 nm at 20°C. The laser operates in the fundamental transverse mode and the astigmatic distance is less than 1 μm. The laser has operated for over 1000 h at 60°C with a power of 3 mW.

Inspec keywords: chemical vapour deposition; zinc; semiconductor doping; III-V semiconductors; semiconductor junction lasers; aluminium compounds; gallium arsenide

Other keywords: AlGaAs:Zn laser diode; fundamental transverse mode; 3 mW; 1000 h; two step diffusion technique; 20 C; semiconductors; 9.4 mA; 780 nm; metalorganic chemical vapour deposition; low threshold current laser; solid-phase diffusion technique; lasing wavelength; MOCVD; 1 micron; 60 C; threshold current; astigmatic distance; Zn diffusion stripe laser

Subjects: Design of specific laser systems; Chemical vapour deposition; II-VI and III-V semiconductors; Lasing action in semiconductors; Semiconductor lasers; Semiconductor doping

References

    1. 1)
      • Matsuo, N., Kawaguchi, M., Aida, H., Matsumoto, N., Ikegami, Y., Kashiwa, S.: `GaAs/GaAlAs DDS lasers fabricated by MOCVD and solid to solid diffusion', Extended Abstracts 48th Autumn Meeting of Japan Society of Applied Physics, October 1987, Nagoya, p. 737, (18a-ZR-1).
    2. 2)
      • K. Hahamitsu , S. Ohsaka , K. Yoshida , H. NiShi , K. Hori , T. Takusagawa . Semicylindrical Zn-diffused stripe GaAlAs laser diodes with very low threshold currents. Electron. Lett. , 853 - 855
    3. 3)
      • M. Ueno , H. Yonezu . Stable transverse mode oscillation in planar stripe laser with deep Zn diffusion. IEEE J. Quantum Electron. , 1189 - 1196
    4. 4)
      • W. Susaki , S. Takamiya . Visible semiconductor laser. Jpn. J. Appl. Phys. , 205 - 210
    5. 5)
      • H. Namizaki , H. Kumabe , W. Susaki . Spontaneous emission behavior in AlGaAs TJS lasers. IEEE J. Quantum Electron. , 799 - 803
    6. 6)
      • Nobuhara, H., Sanada, T., Kuno, M., Makiuchi, M., Fujh, T., Wada, W.: `OEIC transmitter fabricated by planar integration process', Extended Abstract 18th Conf. Solid State Devices and Materials, 1986, Tokyo, p. 185–188.
    7. 7)
      • D.D. Sell , H.C. Casey , W. Wecht . Concentration dependence of the refractive index for n- and p-type GaAs between 1.2 and l.8eV eV. J. Appl. Phys. , 2650 - 2657
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Erratum: 780 nm low threshold current laser fabricated by two-step, solid-phase Zn diffusion