Low-threshold GRIN-SCH AlGaInAs 1.55 μm quantum well buried ridge structure lasers grown by molecular beam epitaxy

Access Full Text

Low-threshold GRIN-SCH AlGaInAs 1.55 μm quantum well buried ridge structure lasers grown by molecular beam epitaxy

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

© The Institution of Electrical Engineers
Published

Two-step MBE/MOVPE epitaxy buried ridge stripe GRIN-SCH quantum well lasers having MBE active structure consisting of Gain As quantum wells and an AlGaInAs continuously graded confinement region have been fabricated and characterised. Devices operating at 1.55μm wavelength with a low CW threshold current of 18.7 mA have been demonstrated. This figure is the best result obtained in the AlGaInAs system. A study of the intrinsic optical response of the active layer showed a very fast decay of the resonance oscillations. A good figure of the optical bandwidth move-out rate 3-9GHzmW−1/2has been observed.

Inspec keywords: gallium arsenide; III-V semiconductors; vapour phase epitaxial growth; aluminium compounds; semiconductor epitaxial layers; semiconductor quantum wells; molecular beam epitaxial growth; indium compounds; semiconductor junction lasers; semiconductor growth

Other keywords: 1.55 micron; continuously graded confinement region; fast decay; GaInAs-AlGaInAs; two-step MBE/MOVPE epitaxy; low CW threshold current; optical bandwidth move-out rate; intrinsic optical response; 18.7 mA; buried ridge stripe GRIN-SCH quantum well lasers; quantum wells; resonance oscillations

Subjects: II-VI and III-V semiconductors; Lasing action in semiconductors; Chemical vapour deposition; Design of specific laser systems; Thin film growth, structure, and epitaxy; Epitaxial growth; Semiconductor junctions; Semiconductor lasers; Vacuum deposition

References

    1. 1)
      • Bouley, J.-C., Charil, J., Chaminant, G.: `1.55 μm strip buried schottky laser', Paper D-4, Abstracts of 9th IEEE Int. Semiconductor Conf., 1984.
    2. 2)
      • J. Praseuth , M.C. Joncour , J.M. Gerard , P. Henoc , M. Quillec . Growth and characterization of AlGalnAs lattice matched to InP grown by molecular-beam epitaxy. J. Appl. Phys. , 400 - 403
    3. 3)
      • R.M. Ash , D.J. Robbins , J. Thompson . GRIN-SCH AlGaInAs/InP quantum-well lasers emitting at 1300nm. Electron. Lett. , 1530 - 1531
    4. 4)
      • Y. Matsushima , K. Utaka , K. Sakai , O. Takeuchi . Room temperature CW operation of MBE-grown GaInAs/AlInAs MQW lasers in 1.5 μn range. Electron. Lett. , 1271 - 1273
    5. 5)
      • C. Kazmierski , B. Theys , B. Rose , A. Mircea , A. Jalil , J. Chevalier . Plasma hydrogenated low-threshold wide-band 1.3 μm buried ridge structure laser. Electron. Lett. , 1433 - 1434
    6. 6)
      • Y. Sakakibara , A. Takemoto , Y. Nakajima , M. Fujiwara , N. Yoshida , S. Kakimoto . Very narrow spectral linewidth of GaInAs MQW-DFB-PPIBH laser diodes. Electron. Lett. , 988 - 991
    7. 7)
      • R. Glew , B. Garrett , P.D. Greene . Very low threshold current density SCH-MQW laser diodes emitting at 1.55 μm. Electron. Lett. , 1103 - 1104
    8. 8)
      • M. Quillec , M. Allovon , F. Brillouet , A. Gloukhian , J.P. Praseuth , B. Sermage . Very low threshold current density GaInAs/AlGaInAs MQW lasers made by phosphorus-free MBE and operating in 1.5–1.6 μm range. Electron. Lett. , 1731 - 1732
    9. 9)
      • K. Uomi , H. Nakano , N. Chinone . Intrinsic modulation bandwidth in ultra-high-doped 1.3 and 1.55 μm GaInAsP DFB lasers. Electron. Lett. , 1689 - 1690
    10. 10)
      • Uomi, K., Nakano, H., Chinone, N.: `Ultra-high speed (17 GHz) 1.55 μm λ/4-shifted DFB lasers and proposal on reducing damping phenomenon for higher speed modulation', Proc. IOOC, 1989, p. 121.
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19900581
Loading

Related content

content/journals/10.1049/el_19900581
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading