Buried rectangular GaInAs/InP corrugations of 70 nm pitch fabricated by OMVPE

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Buried rectangular GaInAs/InP corrugations of 70 nm pitch fabricated by OMVPE

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© The Institution of Electrical Engineers
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Rectangular InP corrugations of 70 nm pitch and 40 nm depth were buried with GaInAs by OMVPE so as to preserve the rectangular shape. A low regrowth temperature and short heating up time in an atmosphere of high PH3 partial pressure are effective in the suppression of thermal deformation during regrowth.

Inspec keywords: III-V semiconductors; semiconductor growth; gallium arsenide; semiconductor epitaxial layers; indium compounds; vapour phase epitaxial growth

Other keywords: heating up time; regrowth temperature; 70 nm; GaInAs-InP; OMVPE; thermal deformation; rectangular shape; partial pressure

Subjects: II-VI and III-V semiconductors; Epitaxial growth; Low-dimensional structures: growth, structure and nonelectronic properties; Chemical vapour deposition

References

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      • Y. Miyamoto , K. Uesaka , M. Takadou , K. Furuya , Y. Suematsu . OMVPE conditions for GaInAs/InP heterointerfaces and superlattices. J. Cryst. Growth , 353 - 358
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      • E. Inamura , Y. Miyamoto , S. Tamura , T. Takasugi , K. Furuya . Wet chemical etching for ultrafine periodic structure: rectangular InP corrugations of 70 nm pitch and 100 nm depth. Jpn. J. Appl. Phys.. , 2193 - 2196
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      • M. Razeghi , R. Blondeau , K. Kazmierski , M. Krakowskim , B. de Cremoux , J.P. Duchemin , J.C. Bouley . CW operation of 1.57 μm GaxIn1−xASyP1−yInP distributed feedback lasers grown by low-pressure metalorganic chemical vapor deposition. Appl. Phys. Lett. , 784 - 786
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