Evaluation of currents in the fA range

Access Full Text

Evaluation of currents in the fA range

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

© The Institution of Electrical Engineers
Published

A method allowing the determination of very low currents is presented. It consists in the association of an amplification element to a leaky device on the same silicon chip. A theoretical approach is given, the possibilities of this method are deduced, and experimental results are reported and discussed.

Inspec keywords: electric current measurement; insulated gate field effect transistors; MOS integrated circuits; leakage currents

Other keywords: femtoampere current measurement; leakage currents; measurement of very low currents; amplification element; theoretical approach; in situ amplifier; experimental results; MOS ICs; leaky device

Subjects: Other MOS integrated circuits; Current measurement; Insulated gate field effect transistors

References

    1. 1)
      • `CMOS 2μm industrial technology design rules', 1987.
    2. 2)
      • P. Girard . The floating gate metal.oxide semiconductor transistor, a device for low kV e-beam charging evaluations. Scanning Microscopy , 4 , 1995 - 2000
    3. 3)
      • S.E. Nordquist , J.W. Haslett , F.N. Trofimenkoff . High temperature leakage current suppression in CMOS integrated circuits. Electron. Lett. , 17 , 1133 - 1135
    4. 4)
      • S.M. Sze . (1981) , Physics of electron devices.
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19900553
Loading

Related content

content/journals/10.1049/el_19900553
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading