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Evaluation of currents in the fA range

Evaluation of currents in the fA range

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© The Institution of Electrical Engineers
Published

A method allowing the determination of very low currents is presented. It consists in the association of an amplification element to a leaky device on the same silicon chip. A theoretical approach is given, the possibilities of this method are deduced, and experimental results are reported and discussed.

Inspec keywords: electric current measurement; insulated gate field effect transistors; MOS integrated circuits; leakage currents

Other keywords: femtoampere current measurement; leakage currents; measurement of very low currents; amplification element; theoretical approach; in situ amplifier; experimental results; MOS ICs; leaky device

Subjects: Other MOS integrated circuits; Current measurement; Insulated gate field effect transistors

References

    1. 1)
      • `CMOS 2μm industrial technology design rules', 1987.
    2. 2)
      • P. Girard . The floating gate metal.oxide semiconductor transistor, a device for low kV e-beam charging evaluations. Scanning Microscopy , 4 , 1995 - 2000
    3. 3)
      • S.E. Nordquist , J.W. Haslett , F.N. Trofimenkoff . High temperature leakage current suppression in CMOS integrated circuits. Electron. Lett. , 17 , 1133 - 1135
    4. 4)
      • S.M. Sze . (1981) , Physics of electron devices.
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