Photoluminescence spectroscopy measurement of elastic strain in heteroepitaxial GaAs films

Photoluminescence spectroscopy measurement of elastic strain in heteroepitaxial GaAs films

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GaAs films have been grown on silicon and various insulating substrates. These include silicon-on-sapphire, silicon with a buried implanted oxide, and single crystal sapphire. Quantitative comparison of the respective measured shifts in the dominant photoluminescence peaks (7K) indicates that the GaAs layers deposited on silicon-on-sapphire substrates that have been microstructurally upgraded by the double solid-phase epitaxy process are strain-free.


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