External grating tunable MQW laser with wide tuning range of 240 nm

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External grating tunable MQW laser with wide tuning range of 240 nm

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© The Institution of Electrical Engineers
Published

A very wide tuning range in an external grating tunable InGaAs/InGaAsP MQW laser is demonstrated. Second subband recombination occurs in MQW diode at high current density injection. This contributes to gain expansion and a tuning range of 240 nm was obtained when operated continuously (CW) at room temperature.

Inspec keywords: diffraction gratings; indium compounds; III-V semiconductors; laser tuning; gallium arsenide; semiconductor junction lasers; gallium compounds

Other keywords: semiconductor lasers; InGaAs-InGaAsP; second subband recombination; tunable MQW laser; CW operation; room temperature; wide tuning range; high current density injection; external grating; gain expansion

Subjects: Lasing action in semiconductors; Gratings, echelles; Design of specific laser systems; Semiconductor lasers

References

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      • Y. Arakawa , A. Yariv . Quantum well lasers-gain, spectra, dynamics. IEEE J. Quantum Electron. , 1887 - 1899
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      • I.E. Epler , Holonyak , N. Jun , R.D. Burnham , C. Lindstöm , W. Streifer , T.L. Paoli . Broadband tuning (ΔE ~ 100meV) of AlxGa1−xAs quantum well heterostructure lasers with an external grating. Appl. Phys. Lett. , 740 - 742
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      • B.W. Hakki , T.L. Paoli . Gain spectra in GaAs double-heterostructure injection lasers. J. Appl. Phys. , 1299 - 1306
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