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Exponential bidirectional associative memories

Exponential bidirectional associative memories

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© The Institution of Electrical Engineers
Published

A bidirectional associative memory (BAM) with an exponential nonlinearity is presented. This method has the advantage of exponential strategy. It improves the performance of the BAM. An energy function that decreases as the memory state changes can be defined, ensuring the stability of the system.

Inspec keywords: neural nets; VLSI; integrated memory circuits; content-addressable storage

Other keywords: exponential bidirectional associative memories; bidirectional associative memory; exponential strategy; exponential nonlinearity; energy function; stability

Subjects: Artificial intelligence (theory); Memory circuits; Semiconductor integrated circuits; Semiconductor storage

References

    1. 1)
      • B. Kosko . Adaptive bidirectional associative memory. Appl. Opt. , 4947 - 4960
    2. 2)
      • Chiueh, T.D., Goodman, R.M.: `High-capacity exponential associative memory', Proc. IJCNN, 1988, p. I-153–I-160.
    3. 3)
      • Chiueh, T.D.: `Pattern classification and associative recall by neural networks', 1989, Ph.D. Thesis, California Institute of Technology.
    4. 4)
      • H.M. Tai , C.H. Wu , T.L. Jong . Hight-order bidirectional associative memory. Electron. Lett. , 1424 - 1425
    5. 5)
      • B. Kosko . Bidirectional associative memory. IEEE Trans. , 49 - 60
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