Simulation of EPROM programming characteristics

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Simulation of EPROM programming characteristics

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© The Institution of Electrical Engineers
Published

An efficient method for the simulation of EPROM programming, based on hydrodynamic calculations of electron energy within the device, is described. After the nonMaxwellian energy distribution is calculated, an expression for injected gate current is integrated to find the total gate charge, and hence the threshold voltage shift, as a function of time. Comparison of theoretical and experimental results for actual EPROM programming validates this method.

Inspec keywords: electronic engineering computing; digital simulation; PLD programming; EPROM; semiconductor device models

Other keywords: injected gate current; electron energy; total gate charge; experimental results; threshold voltage shift; nonMaxwellian energy distribution; simulation of EPROM programming; hydrodynamic calculations

Subjects: Firmware; Memory circuits; Electronic engineering computing; Semiconductor device modelling, equivalent circuits, design and testing; Other aspects of storage devices and techniques; Semiconductor storage

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      • C.N. Berglund , R.J. Powell . Photoinjection into SiO2: Electron scattering in the image force potential well. J. Appl. Phys. , 573 - 579
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