© The Institution of Electrical Engineers
A novel tunnel diode is proposed. Modulation doping is used to define a two dimensional electron or hole gas on either side of a p–n junction tunnelling barrier. The additional parameter of doping spike separation enables a wide range of I–V characteristics to be selected. This leads to a decoupling of the current peak and corresponding voltage. Improvements in current density and speed are predicted.
References
-
-
1)
-
D. Meyerhofer ,
G.A. Brown ,
H.S. Sommers
.
Degenerate germanium tunnel, excess and thermal current in tunnel diodes.
Phys. Rev.
,
1329 -
1341
-
2)
-
E.O. Kane
.
Theory of tunneling.
J. Appl. Phys.
,
83 -
91
-
3)
-
L. Esaki
.
New phenomenon in narrow germanium p–n junctions.
Phys. Rev.
,
603 -
604
-
4)
-
Nagakawa, K., Van Gorkum, A.A., Shiraki, Y.: `Atomic layer doping (ALD) technology in Si and its application to a new structure FET', 5th Int. Conf., 1988, Sapporo, Japan, MBE-V Sapporo, p. 242–245, Molecular beam epitaxy 1988.
-
5)
-
U. Kunze ,
G. Lautz
.
Tunnel spectroscopy of subband structure in n-inversion layers on (111) and (100) Si surfaces.
Surf. Sci.
,
55 -
68
-
6)
-
T.J. Shewchuk ,
P.C. Chapin ,
P.D. Coleman ,
W. Kopp ,
R. Fischer ,
H. Morkoc
.
Resonant tunneling oscillations in a GaAs-AlGaAs heterostructure at room temperature.
Appl. Phys. Lett.
,
508 -
510
-
7)
-
J.P. Leburton ,
J. Kolodzey ,
S. Briggs
.
Bipolar tunneling field-effect transistor: A three-terminal negative differential resistance device for high-speed applications.
Appl. Phys. Lett.
,
1608 -
1610
-
8)
-
E.F. Schubert ,
J.E. Cunningham ,
W.T. Tsang
.
Electronmobility enhancement and electron-concentration enhancement in delta-doped n-GaAs at T = 300 K.
Sol. Stat. Commun.
,
591 -
594
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