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Double-heterostructure AlGaAs/GaAs lasers grown on the mesas of trenched Si substrate by molecular beam epitaxy

Double-heterostructure AlGaAs/GaAs lasers grown on the mesas of trenched Si substrate by molecular beam epitaxy

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The growth and device characteristics of stripe Al0.26Ga0.74As/GaAs double-heterostructure lasers grown on mesas of trenched Si by MBE is reported. The TE and TM modes lase at different injection levels depending on the laser stripe width. This behaviour is attributed to the variation of the residual thermal stress present in the laser structures as a function of stripe width. By comparing the polarisations of the laser radiations from a narrow and broad stripe laser, it is found that a narrow mesa is effective in reducing the residual thermal stress.

References

    1. 1)
      • H.P. Lee , X. Liu , H. Lin , J.S. Smith , S. Wang , Y.H. Huang , P. Yu . Tensile stress variation of chemically etched GaAs film grown on Si substrate. Appl. Phys. Lett.
    2. 2)
      • F.H. Pollak , M. Candona . Piezo-electroreflectance in Ge, GaAs and Si. Phys. Rev.
    3. 3)
      • V. Swaminathan , P. Parayanthal , R.L. Hartman . Electro-optical effects of externally applied [100] uniaxial stress on InGaAsP 1.3 and 1.5 μm injection lasers. Appl. Phys. Lett.
    4. 4)
      • H.C. Casey , M.B. Panish . (1978) , Heterostructure lasers Part A: Fundamental principles.
    5. 5)
      • S. Zemon , S.K. Shastry , P. Norris , C. Jagannath , G. Lambert . Photoluminescence and photoluminescence excitation spectra of GaAs grown directly on Si. Proc. Mat. Res. Soc.
    6. 6)
      • J.P. Van Der Ziel , R.D. Dupuis , R.A. Logan , C.J. Pinzone . Degradation of GaAs lasers grown by metalorganic chemical vapor deposition on Si substrates. Appl. Phys. Lett.
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