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600 μm/min laser-induced nonthermal etching of GaAs in an HF solution

600 μm/min laser-induced nonthermal etching of GaAs in an HF solution

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© The Institution of Electrical Engineers
Published

600 μm/min room-temperature photochemical aqueous etching of n-type GaAs in an HF acid based solution is reported. This rapid etch rate is achieved under UV illumination and represents more than an order of magnitude enhancement over previously reported results for solutions containing no HF acid. The process is used to fabricate deep, large-area structures such as trench formations and through-wafer via holes which would otherwise be impractical with slower direct-write techniques.

Inspec keywords: gallium arsenide; laser beam applications; III-V semiconductors; etching; semiconductor technology

Other keywords: 10 micron/s; trench formations; UV illumination; through-wafer via holes; HF acid based solution; Hf; deep large area structures; room-temperature; rapid etch rate; n-type semiconductor; laser-induced nonthermal etching; GaAs

Subjects: II-VI and III-V semiconductors; Laser applications; Surface treatment (semiconductor technology)

References

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