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Lateral nonuniform doping technique and its application to the fabrication of GaAs MESFETs with a lateral linear doping channel

Lateral nonuniform doping technique and its application to the fabrication of GaAs MESFETs with a lateral linear doping channel

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A novel lateral nonuniform doping technique, which is compatible with conventional ion implantation technology, is reported. GaAs MESFETs with a linear lateral doping channel have been fabricated and improvements in performance have been demonstrated.

References

    1. 1)
      • Y.-C. Wang , M. Bahrami . GaAs MESFET with lateral nonuniform doping. Int. J. Electron. , 5 , 665 - 676
    2. 2)
      • J.J. Barnes , R.J. Lonex , H. Ahmed . Finite-element simulation of GaAs MESFETs with lateral doping profiles and submicron gate. IEEE Trans.
    3. 3)
      • A.F. Evason , J.R.A. Cleaver , H. Ahmed . Fabrication and performance of GaAs MESFETs with graded channel doping using focused ion-beam implantation. IEEE Electron Device Lett. , 6 , 281 - 283
    4. 4)
      • H. Lezec , K. Iemail , L.J. Maroney , M.I. Shepard , D.A. Antoniadis , J. Melngailis . A tunable-frequency Gunn diode fabricated by focused ion-beam implantation. IEEE Electron Device Lett. , 476 - 478
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