Doping level anomalies in p-InP resulting from exposure to dopant precursors during cool-down in MOVPE

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Doping level anomalies in p-InP resulting from exposure to dopant precursors during cool-down in MOVPE

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Large dopant deactivation effects occur when p-InP is cooled in ambients containing DMZn. This does not appear to be the result of hydrogen passivation, rather we believe it to be caused by the presence of high concentrations of interstitial donors.

Inspec keywords: secondary ion mass spectra; vapour phase epitaxial growth; III-V semiconductors; doping profiles; semiconductor growth; indium compounds; semiconductor epitaxial layers; semiconductor doping

Other keywords: epitaxial growth; SIMS; MOVPE; dopant deactivation effects; dimethyl zinc; ambients; dopant precursors; III-V semiconductors; InP:Zn, H; interstitial donors; cool-down

Subjects: Semiconductor doping; Doping and implantation of impurities; Impurity concentration, distribution, and gradients; Thin film growth, structure, and epitaxy; II-VI and III-V semiconductors; Epitaxial growth; Chemical vapour deposition

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