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We fabricated low threshold In0.2Ga0.8As surface emitting microlasers having various etch depths and sizes. Comparison of electrical and optical properties was made between deep etched (deeper than the active layer) and shallow etched (shallower than the active layer) microlasers. Shallow etched microlasers were F-ion implanted to limit current spreading. The ion implanted shallow etched samples, when larger than about 5 µm across, show improved room temperature CW characteristics with lower resistances and lower operating voltages than the deep etched microlasers.
References
-
-
1)
-
D. Botez ,
L.M. Zinkiewicz ,
T.J. Roth ,
L.J. Mawst ,
G. Peterson
.
Low-threshold-current-density vertical cavity surface emitting AlGaAs/GaAs lasers.
IEEE Photon. Technol. Lett.
,
8 ,
205 -
208
-
2)
-
J.L. Jewell ,
A. Scherer ,
S.L. McCall ,
J.P. Harbison ,
L.T. Florez
.
Low-threshold vertical-cavity surface emitting microlasers.
Electron. Lett.
,
1123 -
1124
-
3)
-
A. Ibaraki ,
K. Kawashima ,
K. Furushawa ,
T. Ishikawa ,
T. Yamaguchi ,
T. Niina
.
Buried heterostructure GaAs/GaAlAs distributed Bragg reflector surfaceemitting laser with very low threshold (5.2 mA) under roomtemperature CW conditions.
Jpn. J. Appl. Phys.
,
L667 -
L668
-
4)
-
A. Scherer ,
J.L. Jewell ,
Y.H. Lee ,
J.P. Harbison ,
L.T. Florez
.
Fabrication of microlasers and microresonator optical switches.
Appl. Phys. Lett.
-
5)
-
K. Iga ,
S. Kinoshita ,
F. Koyama
.
Microcavity GaAlAs/GaAs surface emitting laser with Ith = 6 mA.
Electron. Lett.
,
134 -
136
-
6)
-
Y.H. Lee ,
J.L. Jewell ,
A. Scherer ,
S.L. McCall ,
J.P. Harbison ,
L.T. Florez
.
Room-temperature continuous-wave vertical cavity single-quantum-wellmicrolaser diodes.
Electron. Lett.
,
1377 -
1378
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19900152
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