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We fabricated low threshold In0.2Ga0.8As surface emitting microlasers having various etch depths and sizes. Comparison of electrical and optical properties was made between deep etched (deeper than the active layer) and shallow etched (shallower than the active layer) microlasers. Shallow etched microlasers were F-ion implanted to limit current spreading. The ion implanted shallow etched samples, when larger than about 5 µm across, show improved room temperature CW characteristics with lower resistances and lower operating voltages than the deep etched microlasers.
Inspec keywords: III-V semiconductors; ion implantation; indium compounds; gallium arsenide; semiconductor junction lasers; etching
Other keywords:
Subjects: Lasing action in semiconductors; Surface treatment and degradation in semiconductor technology; Semiconductor lasers; Doping and implantation of impurities; Surface treatment (semiconductor technology); Semiconductor doping