© The Institution of Electrical Engineers
We report, for the first time, the successful integration of GaAs LEDs on Si using the epitaxial lift-off technique. LEDs were processed after the transfer and could be aligned to features on the Si substrate. LED contacts were defined on both sides of the thin layer. Operation characteristics similar to those of LEDs grown on GaAs were observed. This realisation holds out interesting prospects in the fabrication of quasi-monolithic opto-electronic integrated circuits.
References
-
-
1)
-
Turner, G.W., Choi, H.K., Mattia, J.P., Chen, C.L., Eglash, S.J., Tsaur, B.-Y.: `Monolithic GaAs/Si integration', Materials Research Society Symp. Proc, Reno, 1988, p. 179–192.
-
2)
-
Demeester, P., Van Daele, P., Pollentier, I., Temmerman, W., Lagasse, P., Rondi, D., Glastre, G., Enard, A., Blondeau, R., Jarry, P., Le Bris, J., Renaud, M., Angement, H., Wale, M.J., Wilson, N.: `Integration of GaAs MESFETs and InP waveguides for optical switching networks', Proc. 15th European Conf. on Optical communication, 1989, Gothenborg, p. 356–359.
-
3)
-
Ackaert, A., Buydens, L., Lootens, D., Van Daele, P., Demeester, P.: `Crack formation and selective growth in MOVPE-GaAs on Si and its application to OEICs', Proc. 19th European Solid- state Device Research Conf., 1989, Berlin, p. 397–400.
-
4)
-
C. van Hoof ,
W. de Raedt ,
M. van Rossum ,
G. Borghs
.
MESFET lift-off from GaAs substrate to glass host.
Electron. Lett.
,
136 -
137
-
5)
-
Wale, M.J., Edge, C., Randle, F.A., Pedder, D.J.: `A new self-aligned technique for the assembly of integrated optical devices with optical fibre and electrical interfaces', Proc. 15th European Conf. on Optical communication, 1989, Gothenborg, p. 368–371.
-
6)
-
E. Yablonovitch ,
T. Gmitter ,
J.P. Harbison ,
R. Bhat
.
Extreme selectivity in the lift-off of epitaxial GaAs films.
Appl. Phys. Lett.
,
2222 -
2224
-
7)
-
yi-yan, A., Chan, W.K., Gmitter, T.J., Florez, L.T., Jackel, J.L., Yablonovitch, E., Bhat, R., Harbison, J.P.: `Grafted GaAs detectors on lithium niobate and glass optical waveguides', Extended abstracts of 5th European Conf. on Integrated optics, 1989, Paris.
-
8)
-
E. Yablonovitch ,
E. Kapon ,
T.J. Gmitter ,
C.P. Yun ,
R. Bhat
.
Double heterostructure GaAs/AlGaAs thin film diode lasers on glass substrates.
IEEE Phot. Tech. Lett.
,
41 -
42
-
9)
-
Pollentier, I., De Dobbelaere, P., De Pestel, F., Van Daele, P., Demeester, P.: `Integration of GaAs LEDs on Si by epi-lift-off', Proc. 19th European Solid-state Device Research Conf., 1989, Berlin, p. 401–404.
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19900130
Related content
content/journals/10.1049/el_19900130
pub_keyword,iet_inspecKeyword,pub_concept
6
6