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Epitaxial lift-off GaAs LEDs to Si for fabrication of opto-electronic integrated circuits

Epitaxial lift-off GaAs LEDs to Si for fabrication of opto-electronic integrated circuits

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© The Institution of Electrical Engineers
Published

We report, for the first time, the successful integration of GaAs LEDs on Si using the epitaxial lift-off technique. LEDs were processed after the transfer and could be aligned to features on the Si substrate. LED contacts were defined on both sides of the thin layer. Operation characteristics similar to those of LEDs grown on GaAs were observed. This realisation holds out interesting prospects in the fabrication of quasi-monolithic opto-electronic integrated circuits.

Inspec keywords: III-V semiconductors; light emitting diodes; photolithography; gallium arsenide; integrated optoelectronics; etching; integrated circuit technology

Other keywords: epitaxial lift-off technique; Si substrate; quasimonolithic OEICs; opto-electronic integrated circuits; light emitting diodes; photolithography; GaAs LEDs; GaAs-Si; etching; semiconductors

Subjects: Light emitting diodes; Lithography (semiconductor technology); Semiconductor integrated circuits; Surface treatment (semiconductor technology); Integrated optoelectronics

References

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      • Pollentier, I., De Dobbelaere, P., De Pestel, F., Van Daele, P., Demeester, P.: `Integration of GaAs LEDs on Si by epi-lift-off', Proc. 19th European Solid-state Device Research Conf., 1989, Berlin, p. 401–404.
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