Ultra high transconductance 0.25 μm gate MESFET with strained InGaAs buffer layer

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Ultra high transconductance 0.25 μm gate MESFET with strained InGaAs buffer layer

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© The Institution of Electrical Engineers
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We have successfully fabricated MBE-grown GaAs field effect transistors employing a strained MQW buffer layer. Quarter micron gate device showed transconductance as high as 1.460mS/mm (900mS/mm extrinsic) at a current density of 620mA/mm. The measured fc was 75GHz. These high transconductances are, to the authors knowledge, the best reported for GaAs MESFETs.

Inspec keywords: Schottky gate field effect transistors; indium compounds; semiconductor epitaxial layers; solid-state microwave devices; semiconductor quantum wells; gallium arsenide; III-V semiconductors; molecular beam epitaxial growth

Other keywords: strained InGaAs buffer layer; strained MQW buffer layer; 75 GHz; 0.25 micron; transconductance; semiconductors; current density; quarter micron gate; cutoff frequency; GaAs MESFETs

Subjects: Solid-state microwave circuits and devices; Other field effect devices; Epitaxial growth; Semiconductor junctions; II-VI and III-V semiconductors

References

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      • A. Cappy , Robert Soares . , GaAs MESFET circuit design.
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      • A. Cappy . Noise modelling and measurement techniques. IEEE Trans. , 1 , 1 - 10
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      • P. Godts , J. Vanbremeersch , E. Constant , J. Zimmermann . Realisation of very high transconductance GaAs MESFET. Electron. Lett. , 775 - 776
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      • G. Dambrine , A. Cappy , F. Heliodore , E. Playez . A new method for determining FET small-signal equivalent circuit. IEEE Trans. , 7 , 1151 - 1159
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