© The Institution of Electrical Engineers
By proper optimisation of the channel, the gate leakage of 1μm gate-length GaInAs HIGFETs has been reduced to below 10nA/mm. This has been achieved in a delta-doped structure in which Zener tunnelling is inoperative.
References
-
-
1)
-
S. Loualiche ,
H. L'Haridon ,
A. Lecorre ,
D. Lecrosnier ,
M. Salvi ,
P.N. Favennec
.
Schottky and FET fabrication in InGaAs and InP.
Appl. Phys. Lett.
-
2)
-
B.F. Levine ,
A.Y. Cho ,
J. Walker ,
R.J. Malik ,
D.A. Kleinman ,
D.L. Sivco
.
InGaAd/InAlAs MQW intersubband absorption.
Appl. Phys. Lett.
-
3)
-
D. Wake ,
A. Nelson ,
S. Cole ,
S. Wong ,
I.D. Henning ,
E.G. Scott
.
InGaAs/InP JFETs made using MOVPE.
IEEE Electron Dev. Lett.
-
4)
-
P.R. Ruden ,
C.J. Han ,
M. Shur
.
gate current of modulation doped FETs.
J. Appl. Phys.
-
5)
-
A. Fathimulla ,
J. Abrahams ,
T. Loughran ,
H. Hier
.
High performance InAlAs/InGaAs HEMTs and MESFETs.
IEEE Electron Dev. Lett.
-
6)
-
E. Schubert ,
W.T. Tsang ,
M.D. Feuer ,
P.M. Mankiewich
.
High transconductance GaInAs/InP MISFETs by MBE.
IEEE Electron Dev. Lett.
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19891156
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