Control of gate leakage in AlInAs-insulator HIGFETs

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Control of gate leakage in AlInAs-insulator HIGFETs

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© The Institution of Electrical Engineers
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By proper optimisation of the channel, the gate leakage of 1μm gate-length GaInAs HIGFETs has been reduced to below 10nA/mm. This has been achieved in a delta-doped structure in which Zener tunnelling is inoperative.

Inspec keywords: gallium arsenide; aluminium compounds; indium compounds; III-V semiconductors; insulated gate field effect transistors; semiconductor doping

Other keywords: gate leakage; channel; optimisation; HIGFETs; Zener tunnelling; delta-doped structure; GaInAs-AlInAs; 1 micron

Subjects: Semiconductor doping; Insulated gate field effect transistors; II-VI and III-V semiconductors

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