New λ/4 phase-shift method by conversion of refractive index difference and application for 1.5 μm GaInAsP/InP DFB laser
New λ/4 phase-shift method by conversion of refractive index difference and application for 1.5 μm GaInAsP/InP DFB laser
- Author(s): J.I. Shim ; K.S. Lee ; S. Arai ; Y. Suematsu ; K. Komori
- DOI: 10.1049/el:19891109
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- Author(s): J.I. Shim 1 ; K.S. Lee 1 ; S. Arai 1 ; Y. Suematsu 1 ; K. Komori 1
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View affiliations
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Affiliations:
1: Department of Physical Electronics, Tokyo Institute of Technology, Tokyo, Japan
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Affiliations:
1: Department of Physical Electronics, Tokyo Institute of Technology, Tokyo, Japan
- Source:
Volume 25, Issue 24,
23 November 1989,
p.
1654 – 1656
DOI: 10.1049/el:19891109 , Print ISSN 0013-5194, Online ISSN 1350-911X
A new method to introduce a phase shift of π/2 equivalently by inversion of the refractive index difference, which can be easily done by conventional photolithography, is proposed and applied for a 1.5 μm GalnAsP/lnP DFB laser. The λ/4 shifted effect was confirmed by observing the lasing spectrum of an antireflection-coated DFB laser below threshold under CW operation.
Inspec keywords: gallium compounds; III-V semiconductors; optical waveguides; indium compounds; refractive index; laser transitions; semiconductor junction lasers; distributed feedback lasers; optical workshop techniques; gallium arsenide
Other keywords:
Subjects: Optical waveguides and couplers; Semiconductor lasers; Design of specific laser systems; Lasing action in semiconductors; Optical waveguides; Optical fabrication, surface grinding
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