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Use of implant isolation for fabrication of vertical cavity surface-emitting laser diodes

Use of implant isolation for fabrication of vertical cavity surface-emitting laser diodes

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© The Institution of Electrical Engineers
Published

We report the first successful use of implant isolation by singly charged oxygen to fabricate MBE-grown vertical cavity surface-emitting lasers (VCSELs). Almost identical room-temperature pulsed thresholds of 26 mA on 15μm diameter devices with 0.25μm GaAs active thicknesses were obtained using implant isolation against etched mesa isolation. The planar nature of implant isolation greatly simplifies processing, to allow more sophisticated use of VCSELs.

Inspec keywords: gallium arsenide; ion implantation; laser cavity resonators; aluminium compounds; molecular beam epitaxial growth; semiconductor junction lasers; III-V semiconductors; optical workshop techniques

Other keywords: MBE-grown; 15 micron; implant isolation; semiconductor lasers; singly charged O implant; fabrication; vertical cavity; 26 mA; GaAs active thicknesses; GaAs-AlGaAs; surface-emitting laser diodes; 0.25 micron

Subjects: Semiconductor lasers; Design of specific laser systems; Semiconductor doping; Laser resonators and cavities; Laser resonators and cavities; Lasing action in semiconductors; Epitaxial growth; Optical fabrication, surface grinding

References

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