Use of implant isolation for fabrication of vertical cavity surface-emitting laser diodes

Use of implant isolation for fabrication of vertical cavity surface-emitting laser diodes

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We report the first successful use of implant isolation by singly charged oxygen to fabricate MBE-grown vertical cavity surface-emitting lasers (VCSELs). Almost identical room-temperature pulsed thresholds of 26 mA on 15μm diameter devices with 0.25μm GaAs active thicknesses were obtained using implant isolation against etched mesa isolation. The planar nature of implant isolation greatly simplifies processing, to allow more sophisticated use of VCSELs.


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