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Analysis of drain breakdown voltage in SOI n-channel MOSFETs

Analysis of drain breakdown voltage in SOI n-channel MOSFETs

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© The Institution of Electrical Engineers
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The reduction of drain breakdown voltage in SOI n-MOSFETs with floating substrate is related to the presence of a parasitic NPN bipolar structure, the base of which is the floating body of the device. Reduction of breakdown voltage (compared to the case where a body contact is used) is shown to be dependent on both channel length and minority carrier lifetime in the SOI material. Conversely, it is shown that mere measurement of MOSFET breakdown voltages can be used to extract the minority carrier lifetime in the SOI material.

Inspec keywords: electric breakdown of solids; minority carriers; insulated gate field effect transistors; carrier lifetime

Other keywords: parasitic n-p-n bipolar structure; n-channel; minority carrier lifetime; channel length; drain breakdown voltage; floating substrate; Si; MOSFETs; semiconductor; SOI material

Subjects: Insulated gate field effect transistors

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