a-Si:H TFTs using low-temperature CVD of Si3H8

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a-Si:H TFTs using low-temperature CVD of Si3H8

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© The Institution of Electrical Engineers
Published

a-Si:H layers have been deposited by chemical vapour deposition (CVD) at 350°C using Si3H8 as the source gas. Inverted staggered gate thin-film transistors (TFTs) were fabricated with plasma-CVD-grown SiNx as the gate insulator. Electron field-effect mobilities of 0.45cm2/Vs were obtained, and the on/off ratio in the drain current was 106.

Inspec keywords: hydrogen; silicon compounds; silicon; thin film transistors; amorphous semiconductors; CVD coatings

Other keywords: source gas; SiNx-Si:H; thin-film transistors; low-temperature CVD; 350 degC; gate insulator; on/off ratio; drain current; Si3H8; inverted staggered gate

Subjects: Chemical vapour deposition; Insulated gate field effect transistors

References

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      • Meakin, D., Ferry, A., Palmer, D., Saunders, M.: `Deposition of polysilicon for TFTs on Corning 7059 glass using a new large-area (350 × 350mm) reactor design', Digest of Soc. for information display, 1989, p. 159–162.
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