Abrupt p+ layers in GaAs by 200°C mercury implantation

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Abrupt p+ layers in GaAs by 200°C mercury implantation

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© The Institution of Electrical Engineers
Published

We have demonstrated for the first time abrupt and shallow p-type layers in GaAs by implanting mercury and the use of rapid thermal annealing (RTA). We have observed that the time dependence of electrical activation characteristics of the Hg-implanted samples is similar to other p-type species. Furthermore, abrupt electrical profiles with hole concentrations of the order of 9×1018cm−3 have been achieved after annealing at 900°C for 3 s.

Inspec keywords: ion implantation; gallium arsenide; annealing; carrier density; III-V semiconductors

Other keywords: 900 degC; rapid thermal annealing; GaAs:Hg; abrupt electrical profiles; electrical activation characteristics; hole concentrations; 3 s; abrupt p+ layers; shallow p-type layers

Subjects: Semiconductor technology; II-VI and III-V semiconductors; Semiconductor doping

References

    1. 1)
      • M.V. McLevige , K.V. Vaidyanathan , B.G. Streetman . Diffusion studies of Be-implanted GaAs by SIMS and electrical profiling. Solid-State Commun.
    2. 2)
      • Morris, N., Sealy, B.J.: `Theoretical modelling of the electrical activation mechanism in ion implanted GaAs', Proc. 14th Inst. Phys. conf. on GaAs and related compounds, 1987, Crete, p. 81.
    3. 3)
      • J.W. Mayer , L. Eriksson , J.A. Davies . (1970) , Ion implantation in semiconductors.
    4. 4)
      • N.J. Barrett , J.D. Grangce , B.J. Sealy , K.G. Stephens . Annealing of selenium implanted GaAs. J. Appl. Phys.
    5. 5)
      • R. Gwilliam , R. Bensalem , B.J. Sealy , K.G. Stephens . Transient annealing for the production of n+ contact layers in GaAs. Physica
    6. 6)
      • Wilkie, J.H.: `Rapid thermal annealing of acceptor implanted InP and InGaAs', 1988, PhD thesis, University of Surrey, UK.
    7. 7)
      • N.J. Barrett , J.D. Grange , B.J. Sealy , K.G. Stephens . Annealing of zinc implanted GaAs. J. Appl. Phys.
    8. 8)
      • A.C.T. Tang , B.J. Sealy , A. Rezazadeh . Abrupt high hole concentration profiles in GaAs by Zn + P implantation. Electron. Lett. , 861 - 863
    9. 9)
      • R. Bensalem , A. Abid , B.J. Sealy . Evaporated aluminium nitride encapsulating films. Thin Solid Flims
    10. 10)
      • R. Bensalem , B.J. Sealy . Activation mechanism of zinc implants in GaAs. Appl. Phys. Lett.
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