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Abrupt p+ layers in GaAs by 200°C mercury implantation

Abrupt p+ layers in GaAs by 200°C mercury implantation

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We have demonstrated for the first time abrupt and shallow p-type layers in GaAs by implanting mercury and the use of rapid thermal annealing (RTA). We have observed that the time dependence of electrical activation characteristics of the Hg-implanted samples is similar to other p-type species. Furthermore, abrupt electrical profiles with hole concentrations of the order of 9×1018cm−3 have been achieved after annealing at 900°C for 3 s.

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