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Increase in photoluminescence of Zn-doped p-type InP after hydrogenation

Increase in photoluminescence of Zn-doped p-type InP after hydrogenation

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© The Institution of Electrical Engineers
Published

We report on the effect of hydrogenation on the lowtempeTature (5.5 K) photoluminescence properties of Zndoped p-type (p ∼ 3 × 1018cm-3) InP substrates. The photoluminescence spectrum of the as-grown sample shows a ZnIn acceptor-related transition near the band-edge at l.386eV, a Zn-related PL band at l.214eV and a phosphorus vacancy Vp-related PL band at 1.01 eV. After hydrogenation of the samples by exposure to hydrogen plasma, which completely passivates the ZnIn acceptors over a depth of more than 1μ, the deep luminescence bands (1.214 and 1.01eV) disappeared, with a concomitant ∼ 2000-fold increase in the intensity of the near-band-edge emission. Such a large increase in radiative efficiency together with the elimination of the deep luminescence bands indicates hydrogen passivation of deep nonradiative centers in addition to passivation of shallow acceptors.

Inspec keywords: photoluminescence; III-V semiconductors; substrates; deep levels; zinc; passivation; semiconductor doping; indium compounds

Other keywords: H passivation; 1.01 eV; low-temperature; 1.214 eV; photoluminescence; radiative efficiency increase; H plasma exposure; deep luminescence bands; III-V semiconductors; 5.5 K; near-band-edge emission; p-type substrates; 1.386 eV; shallow acceptors; InP:Zn,H

Subjects: Impurity and defect levels in tetrahedrally bonded nonmetals; Semiconductor doping; Photoluminescence in tetrahedrally bonded nonmetals; Luminescent materials; Doping and implantation of impurities; II-VI and III-V semiconductors

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