Resistivity of ion beam synthesised CoSi2
Resistivity of ion beam synthesised CoSi2
- Author(s): B.J. Sealy ; B.L. Tan ; R.M. Gwilliam ; K.J. Reeson ; C. Jeynes
- DOI: 10.1049/el:19891030
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- Author(s): B.J. Sealy 1 ; B.L. Tan 1 ; R.M. Gwilliam 1 ; K.J. Reeson 1 ; C. Jeynes 1
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View affiliations
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Affiliations:
1: Department of Electronic & Electrical Engineering, University of Surrey, Guildford, UK
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Affiliations:
1: Department of Electronic & Electrical Engineering, University of Surrey, Guildford, UK
- Source:
Volume 25, Issue 22,
26 October 1989,
p.
1532 – 1533
DOI: 10.1049/el:19891030 , Print ISSN 0013-5194, Online ISSN 1350-911X
Thin layers of cobalt disilicide have been produced by ion beam synthesis and their properties determined via electrical measurements and Rutherford backscattering. Thicknesses of the silicide layers depended on the ion dose and ranged between 900 and 2300 A. The silicide layers were highly conducting with some sheet resistivities below 1Ω/ corresponding to resistivities of 10–15 μΩcm/□.
Inspec keywords: metallisation; annealing; semiconductor technology; ion implantation; cobalt compounds; electrical conductivity of crystalline semiconductors and insulators
Other keywords:
Subjects: Metallisation and interconnection technology; Semiconductor doping
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