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Resistivity of ion beam synthesised CoSi2

Resistivity of ion beam synthesised CoSi2

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Thin layers of cobalt disilicide have been produced by ion beam synthesis and their properties determined via electrical measurements and Rutherford backscattering. Thicknesses of the silicide layers depended on the ion dose and ranged between 900 and 2300 A. The silicide layers were highly conducting with some sheet resistivities below 1Ω/ corresponding to resistivities of 10–15 μΩcm/□.

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