GRIN-SCH AlGaInAs/InP quantum-well lasers emitting at 1300 nm
GRIN-SCH AlGaInAs/InP quantum-well lasers emitting at 1300 nm
- Author(s): R.M. Ash ; D.J. Robbins ; J. Thompson
- DOI: 10.1049/el:19891029
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- Author(s): R.M. Ash 1 ; D.J. Robbins 1 ; J. Thompson 1
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View affiliations
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Affiliations:
1: Plessey Research (Caswell) Ltd., Towcester, UK
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Affiliations:
1: Plessey Research (Caswell) Ltd., Towcester, UK
- Source:
Volume 25, Issue 22,
26 October 1989,
p.
1530 – 1531
DOI: 10.1049/el:19891029 , Print ISSN 0013-5194, Online ISSN 1350-911X
Buried-ridge GRIN-SCH quantum-well lasers operating at 1·3 μm with an AlGaInAs continuously graded separate confinement region and with AlGaInAs quantum wells have been demonstrated with CW threshold currents of 65 mA.
Inspec keywords: indium compounds; III-V semiconductors; aluminium compounds; semiconductor quantum wells; optical communication equipment; gallium arsenide; semiconductor junction lasers
Other keywords:
Subjects: Optical communication; II-VI and III-V semiconductors; Lasing action in semiconductors; Design of specific laser systems; Semiconductor lasers; Semiconductor junctions
References
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