500 mA AlGaAs/GaAs power heterojunction bipolar transistor

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500 mA AlGaAs/GaAs power heterojunction bipolar transistor

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© The Institution of Electrical Engineers
Published

The current–voltage characteristics of 500 mA AlGaAs/GaAs power heterojunction bipolar transistors axe reported and the influence of case temperature on current handling capability and current gain are analysed. Current handling capabilities of 400–800 mA/mm per emitter periphery at different case temperatures have been successfully demonstrated using a low-doped GaAs layer as an emitter ballasting resistor to obtain a uniform current distribution over individual emitter fingers. A current gain of 50 at a collector current of 500 mA was realised at room temperature for three elementary devices bonded in parallel, each device comprised ten (5 × 25 μm2) emitter fingers.

Inspec keywords: gallium arsenide; aluminium compounds; power transistors; heterojunction bipolar transistors; III-V semiconductors

Other keywords: III-V semiconductors; low-doped GaAs layer; heterojunction bipolar transistor; AlGaAs-GaAs; current handling capability; current gain; emitter ballasting resistor; uniform current distribution; current-voltage characteristics; case temperature; 500 mA; power HBT

Subjects: Bipolar transistors

References

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      • Bayraktaroglu, B., Camilier, N., Shih, H.D., Tserng, H.Q.: `AlGaAs/GaAs heterojunction bipolar transistors for power applications', IEEE MTT-S Tech. Dig., 1987, p. 969–972.
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      • Asbeck, P.M., Chang, M.F., Wang, K.C., Miller, D.L., Sullivan, G.J., Sheng, N.H., Sovero, E.A., Higgins, J.A.: `Heterojunction bipolar transistors for microwave and millimeter-wave integrated circuits', IEEE Mon. Circ. Symp. Tech. Dig., 1987, p. 1–5.
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