Spectral linewidth of AlGaAs/GaAs surface-emitting laser

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Spectral linewidth of AlGaAs/GaAs surface-emitting laser

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The spectral linewidth Δv of a vertical cavity surface-emitting laser was measured for the first time. The linewidth measured by a delayed self-homodyne method was 50 MHz at an output power of 1.4 mW under room-temperature CW operation. The linewidth we obtained was quite narrow in spite of the short cavity configuration of the SE laser. This narrow linewidth is attributed to the high-reflectivity mirrors. The measured linewidth is in good agreement with theoretical values.

Inspec keywords: III-V semiconductors; spectral line breadth; gallium arsenide; laser cavity resonators; semiconductor junction lasers; aluminium compounds

Other keywords: semiconductor lasers; spectral linewidth; short cavity configuration; high-reflectivity mirrors; delayed self-homodyne method; AlGaAs-GaAs; surface-emitting laser; 1.4 mW; room-temperature CW operation; vertical cavity

Subjects: Lasing action in semiconductors; Semiconductor lasers; Laser resonators and cavities; Laser resonators and cavities

References

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      • C.H. Henry . Theory of spontaneous emission noise in open resonators and its application to lasers and optical amplifiers. IEEE J. Lightwave Technol. , 288 - 297
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      • F. Koyama , S. Kinoshita , K. Iga . Room temperature continuous wave lasing characteristics of a GaAs vertical cavity surface emitting laser. Appl. Phys. Lett. , 221 - 222
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      • T. Okoshi , K. Kikuchi , A. Nakayama . Novel method for high resolution measurement of laser output spectrum. Electron. Lett. , 630 - 631
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      • F. Koyama , S. Kinoshita , K. Iga . Room temperature CW operation of GaAs vertical cavity surface emitting laser. Trans. IEICE , 1089 - 1090
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Erratum: Spectral linewidth of AlGaAs/GaAs surface-emitting laser