Novel semiconductor substrate for high-speed integrated circuit manufacture

Access Full Text

Novel semiconductor substrate for high-speed integrated circuit manufacture

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

© The Institution of Electrical Engineers
Published

High-resistivity layers formed beneath silicon surface layers by using proton implantation and annealing are described. Three-step annealing is suggested to form a buried layer of higher resistivity. Experiments show that the quality of the top layers has been improved, with an increase in surface mobility.

Inspec keywords: ion implantation; annealing; integrated circuit manufacture; carrier mobility; elemental semiconductors; silicon

Other keywords: integrated circuit manufacture; top layers; annealing; proton implantation; surface mobility; buried layer

Subjects: Semiconductor industry; Semiconductor integrated circuits; Semiconductor doping

References

    1. 1)
      • Pinizzotto, R.F.: `Silicon on insulator by ion implantation', Proc. Mater. Res. Soc., 1984, 27, p. 265–269.
    2. 2)
      • J. Li . (1989) Chinese Phys. Lett..
    3. 3)
      • H.J. Geipel , W.K. Tice . Reduction of leakage by implantation gettering in VLSI circuit. IBM J. Res. Dev. , 310 - 317
    4. 4)
      • L. Jastrzebski . Origin and control of material defects in silicon VLSI technologies. IEEE J. Solid-State Circuits , 105 - 117
    5. 5)
      • J. Li . Stable defects in silicon implanted with hydrogen ions. Chinese J. Semicond. , 459 - 462
    6. 6)
      • H.M. Liaw . Trends in semiconductor material technologies for VLSI and VHSIC applications. Solid-State Technol. , 65 - 73
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19890955
Loading

Related content

content/journals/10.1049/el_19890955
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading