Improved performance by optimised planar doped barrier launcher in GaAs vertical FET with very short channel width

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Improved performance by optimised planar doped barrier launcher in GaAs vertical FET with very short channel width

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The current–voltage characteristics of a GaAs vertical field effect transistor (VFET) with an n+ip+in+ planar doped barrier (PDB) launcher has been successfully improved by the optimisation of the launcher structure as well as the reduction of the channel width. Electron-beam direct writing has been used to obtain a small channel width of 0.1 ̃ 0.15 μm, resulting in good pinchoff characteristics. The measured maximum transconductances are 383 and 220 mS/mm at 77 and 300 K, respectively. In spite of a very short channel length (0.1 μm) and relatively low channel doping density (5 × 1016cm−3), a high voltage gain of 15 has been obtained.

Inspec keywords: gallium arsenide; field effect transistors; III-V semiconductors; electron beam lithography; doping profiles

Other keywords: channel width; channel doping density; optimised planar doped barrier launcher; n+ip+in+ planar doped barrier; 0.1 micron; very short channel width; 300 K; pinchoff characteristics; current-voltage characteristics; voltage gain; 77 K; maximum transconductances; vertical field effect transistor; GaAs

Subjects: Semiconductor doping; Other field effect devices

References

    1. 1)
      • Mishra, U.K.: , Ph.D. Thesis, Cornell University, Ithaca New York.
    2. 2)
      • Mishra, U.K., Beaubien, R.S., Delanely, M.J., Brown, A.S., Hackett, L.H.: `MBE grown GaAs MESFETs with ultra-high g', IEDM Technical Digest, 1986, p. 829–831.
    3. 3)
      • K. Yamasaki , T. Daniels-Race , J.R. Wendt , W.J. Schaff , P.J. Tasker , L.F. Eastman . Electron velocity enhancement by planardoped barrier source in GaAs vertical FET. Electron. Lett. , 1383 - 1384
    4. 4)
      • U.K. Mishra , P.A. Maki , J.R. Wendt , W.J. Schaff , E. Kohn , L.F. Eastman . Vertical electron transistor (VET) in GaAs with a hetero-junction (AlGaAsGaAs) cathode. Electron. Lett. , 3 , 145 - 146
    5. 5)
      • Mishra, U.K., Kohn, E., Eastman, L.F.: `Submicron GaAs vertical electron transistor', IEDM Technical Digest, 1982, p. 594–597.
    6. 6)
      • Eastman, L.F.: `The limits of electron ballistic motion in compound semiconductor transistors', Inst. Phys. Conf. Ser. no. 63, presented at Int. Symp. GaAs and Related Compounds, 1981, Japan, p. 245–250.
    7. 7)
      • K. Tomizawa , Y. Awano , N. Hashizume , M. Kawashima . Simulation of GaAs submicron FET with hot-electron injection structure. Electron. Lett. , 697 - 698
    8. 8)
      • K. Yamasaki , T. Daniels-Race , S.S. Lu , W.J. Schaff , P.J. Tasker , L.F. Eastman . Determination of electron energy distribution in a GaAs vertical field-effect transistor with hot-electron injection. Appl. Phys. Lett. , 3
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