Tin-doped n+ InP and GaInAs grown by atmospheric-pressure MOCVD

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Tin-doped n+ InP and GaInAs grown by atmospheric-pressure MOCVD

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Heavily doped n+ InP and GaInAs epitaxial layers have been grown by metalorganic chemical vapour deposition (MOCVD) at atmospheric pressure using tetraethyltin (TESn) as a dopant source. Sn-doped InP and GaInAs layers have been grown with doping levels as high as n300K -⋍ 3·3 × 1019cm−3 and n300K ⋍6·1 × 1019cm−3 respectively. Analysis of the Sn concentration in InP:Sn and GaInAs:Sn layers using secondary ion mass spectrometry (SIMS) shows that all of the Sn is ionised in InP and GaInAs. Hall measurements of Nd − Na at 300 and 77 K. indicate that the Sn is uncompensated up to these levels. SIMS analysis also shows that the use of TESn for the growth of n+ InP and GaInAs layers results in no severe memory effects and that abrupt Sn doping profiles can be achieved.

Inspec keywords: Hall effect; tin; heavily doped semiconductors; semiconductor doping; III-V semiconductors; indium compounds; carrier density; secondary ion mass spectroscopy; gallium arsenide; doping profiles; semiconductor growth; electrical conductivity of crystalline semiconductors and insulators; vapour phase epitaxial growth; semiconductor epitaxial layers

Other keywords: SIMS analysis; dopant source; abrupt doping profiles; Hall measurements; epitaxial growth; secondary ion mass spectrometry; Sn concentration; III-V semiconductors; heavily doped n+ epitaxial layers; GaInAs:Sn; metalorganic chemical vapour deposition; tetraethyltin; atmospheric-pressure MOCVD; InP:Sn

Subjects: Doping and implantation of impurities; Chemical vapour deposition; Semiconductor doping; II-VI and III-V semiconductors; Epitaxial growth; Thin film growth, structure, and epitaxy; Impurity concentration, distribution, and gradients; Electrical conductivity of II-VI and III-V semiconductors

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