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Tin-doped n+ InP and GaInAs grown by atmospheric-pressure MOCVD

Tin-doped n+ InP and GaInAs grown by atmospheric-pressure MOCVD

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Heavily doped n+ InP and GaInAs epitaxial layers have been grown by metalorganic chemical vapour deposition (MOCVD) at atmospheric pressure using tetraethyltin (TESn) as a dopant source. Sn-doped InP and GaInAs layers have been grown with doping levels as high as n300K -⋍ 3·3 × 1019cm−3 and n300K ⋍6·1 × 1019cm−3 respectively. Analysis of the Sn concentration in InP:Sn and GaInAs:Sn layers using secondary ion mass spectrometry (SIMS) shows that all of the Sn is ionised in InP and GaInAs. Hall measurements of Nd − Na at 300 and 77 K. indicate that the Sn is uncompensated up to these levels. SIMS analysis also shows that the use of TESn for the growth of n+ InP and GaInAs layers results in no severe memory effects and that abrupt Sn doping profiles can be achieved.


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