Carbon-doped base AlGaAs/GaAs HBTs grown by MOCVD using TMAs
Carbon-doped base AlGaAs/GaAs HBTs grown by MOCVD using TMAs
- Author(s): H. Ito ; T. Kobayashi ; T. Ishibashi
- DOI: 10.1049/el:19890871
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- Author(s): H. Ito 1 ; T. Kobayashi 1 ; T. Ishibashi 1
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View affiliations
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Affiliations:
1: NTT LSI Laboratories, Atsugi, Japan
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Affiliations:
1: NTT LSI Laboratories, Atsugi, Japan
- Source:
Volume 25, Issue 19,
14 September 1989,
p.
1302 – 1303
DOI: 10.1049/el:19890871 , Print ISSN 0013-5194, Online ISSN 1350-911X
AlGaAs/GaAs HBTs with carbon-doped bases are grown by conventional low-pressure MOCVD using trimethylarsine as the carbon source for the first time. The obtained current gain values of 100 for 5×1018cm−3 base doping and 40 for 1×1019cm−3 base doping reveal the feasibility of trimethylarsine as a p-type dopant source for MOCVD growth
Inspec keywords: semiconductor growth; chemical vapour deposition; aluminium compounds; heterojunction bipolar transistors; gallium arsenide; semiconductor doping; III-V semiconductors
Other keywords:
Subjects: Semiconductor doping; Bipolar transistors; Chemical vapour deposition
References
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