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Effects of gamma radiation on threshold voltages of trench isolated CMOS

Effects of gamma radiation on threshold voltages of trench isolated CMOS

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© The Institution of Electrical Engineers
Published

Gamma radiation effects on trench isolated CMOS transistors and sidewall parasitic devices are described. Low dose saturation was observed for biased devices, this being attributable to low volume oxide films inherent to trench technology. Leakage currents generated in NMOS transistors were observed to saturate with cumulative irradiation.

Inspec keywords: leakage currents; CMOS integrated circuits; gamma-ray effects

Other keywords: gamma radiation; radiation effects; sidewall parasitic devices; threshold voltages; low dose saturation; trench isolated CMOS; NMOS transistors; low volume oxide films; CMOS transistors; biased devices; leakage currents

Subjects: CMOS integrated circuits

References

    1. 1)
      • Roberts, M.C., Foster, D.J., Bolbot, P.H., Medhurst, P.L.: `The influence of trench isolation on sub-micron transistors', Proc. 17th European solid-state research conf., 1987, Bologna, p. 589–592.
    2. 2)
      • Medhurst, P.L., Foster, D.J.: `Effects of gamma radiation on trench isolated CMOS', Proc. 18th European solid-state research conf., 1988, Montpellier, p. 295–298.
    3. 3)
      • G.W. Hughes , G.J. Brucker . Radiation hardened MOS technology. Solid-State Technol. , 70 - 84
    4. 4)
      • G.F. Derbenwick , B.L. Gregory . Process optimization of radiation-hardened CMOS integrated circuits. IEEE Trans. , 2151 - 2156
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