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Effects of gamma radiation on threshold voltages of trench isolated CMOS

Effects of gamma radiation on threshold voltages of trench isolated CMOS

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Gamma radiation effects on trench isolated CMOS transistors and sidewall parasitic devices are described. Low dose saturation was observed for biased devices, this being attributable to low volume oxide films inherent to trench technology. Leakage currents generated in NMOS transistors were observed to saturate with cumulative irradiation.

References

    1. 1)
      • Roberts, M.C., Foster, D.J., Bolbot, P.H., Medhurst, P.L.: `The influence of trench isolation on sub-micron transistors', Proc. 17th European solid-state research conf., 1987, Bologna, p. 589–592.
    2. 2)
      • Medhurst, P.L., Foster, D.J.: `Effects of gamma radiation on trench isolated CMOS', Proc. 18th European solid-state research conf., 1988, Montpellier, p. 295–298.
    3. 3)
      • G.W. Hughes , G.J. Brucker . Radiation hardened MOS technology. Solid-State Technol. , 70 - 84
    4. 4)
      • G.F. Derbenwick , B.L. Gregory . Process optimization of radiation-hardened CMOS integrated circuits. IEEE Trans. , 2151 - 2156
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