Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

Reduced out-diffusion of Be implants in GaAs by coimplanting phosphorus

Reduced out-diffusion of Be implants in GaAs by coimplanting phosphorus

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

© The Institution of Electrical Engineers
Published

In this letter, we report that by using rapid thermal annealing (RTA) and the coimplantation of phosphorus, the outdiffusion of beryllium atoms has been prevented. We have observed that the reverse annealing behaviour of the Beimplanted samples has been modified after the coimplantation of phosphorus.

Inspec keywords: ion implantation; III-V semiconductors; gallium arsenide; annealing; phosphorus; beryllium

Other keywords: RTA; GaAs:Be; Be outdiffusion; rapid thermal annealing; electrical activation; reverse annealing; GaAs:Be, P; semiconductors; P coimplantation

Subjects: II-VI and III-V semiconductors; Semiconductor doping

References

    1. 1)
      • T. Ambridge , R. Heckingbottom . Ion implantation in compound semiconductors—an approach based on solid state theory. Rad. Eff.
    2. 2)
      • N.J. Barrett , J.D. Grange , B.J. Sealy , K.G. Stephens . Annealing of zinc-implanted GaAs. J. Appl. Phys , 12
    3. 3)
      • W.V. McLevige , K.V. Vaidyanathan , B.G. Streetman . Diffusion studies of Be-implanted GaAs by SIMS and elecytical profiling. Solid-State Commun.
    4. 4)
      • J. Kasahara , K. Taira , Y. Kato , M. Arai , N. Wantanabe . Formation of P+ layers in GaAs by dual implantation of Zn and As. Jpn. J. Appl. Phys.
    5. 5)
      • K.K. Patel , B.J. Sealy . Rapid thermal annealing of Mg+ + As+ dual implants in GaAs. Appl. Phys. Letts. , 21
    6. 6)
      • K. Morizuka , T. Nozu , K. Tsuda , M. Azuma . Collector-Top GaAs/AlGaAs heterojuction bipolar transistors for high-speed digital Ics. Electron. Lett. , 6
    7. 7)
      • R. Gwilliam , R. Bensalem , B.J. Sealy , K.G. Stephens . Transient annealing for the production of n+ contact layers in GaAs. Physica B
    8. 8)
      • N.J. Barrett , D.C. Bartle , R. Nicholls , J.D. Grange . (1984) Optical furnace annealing of Be implanted GaAs, IoP Conf..
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19890721
Loading

Related content

content/journals/10.1049/el_19890721
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
Print this page
This is a required field
Please enter a valid email address