Reduced out-diffusion of Be implants in GaAs by coimplanting phosphorus

Reduced out-diffusion of Be implants in GaAs by coimplanting phosphorus

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In this letter, we report that by using rapid thermal annealing (RTA) and the coimplantation of phosphorus, the outdiffusion of beryllium atoms has been prevented. We have observed that the reverse annealing behaviour of the Beimplanted samples has been modified after the coimplantation of phosphorus.


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