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Single-mode low-loss buried optical waveguide bends in GaInAsP/InP fabricated by dry etching

Single-mode low-loss buried optical waveguide bends in GaInAsP/InP fabricated by dry etching

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© The Institution of Electrical Engineers
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Low-loss single-mode buried optical waveguide bends in MOVPE-grown InP-based materials are reported. Reactive ion etching (RIE) was used to fabricate the curves which were subsequently buried in InP to reduce optical losses and to control the number of lateral guided modes. Losses as low as 11 dB for 200 μm radius of curvature and 0.3 dB for 300 μm radius of curvature have been measured using TE-polarised light at 1.553 μm wavelength.

Inspec keywords: gallium arsenide; III-V semiconductors; vapour phase epitaxial growth; optical waveguide components; sputter etching; indium compounds; integrated optics; optical interconnections

Other keywords: single-mode buried optical waveguide bends; MOVPE; 200 to 300 micron; wavelength; RIE; 1.1 to 0.3 dB; low-loss buried optical waveguide bends; GaInAsP-InP; radius of curvature; reactive ion etching; optical losses; 1.553 micron; TE-polarised light; dry etching

Subjects: Surface treatment (semiconductor technology); II-VI and III-V semiconductors; Integrated optoelectronics; Integrated optics; Epitaxial growth; Optical waveguides

References

    1. 1)
      • Singh, J., Fisher, M.A., Spurdens, P., Henning, I.D.: `InP based active and passive optical devices fabricated using dry etching', 7th International Conference on Ion and Plasma Assisted Techniques, 31st May–2nd June 1989, Geneva, Switzerland.
    2. 2)
      • L.M. Johnson , Z.L. Liau , S.H. Groves . Low-loss GaInAsP buried heterostructure optical waveguide branches and bends. Appl. Phys. Lett. , 3 , 278 - 280
    3. 3)
      • R.G. Walker . Simple and accurate loss measurement technique for semiconductor optical waveguides. Electron. Lett. , 581 - 583
    4. 4)
      • Niggebrugge, U., Albrecht, P., Doldissen, W., Nolting, H.P., Schmid, H.: `Self aligned low loss totally reflecting waveguide mirrors in InGaAsP/InP', Proceedings of Fourth European Conference on Integrated optics, 1987, p. 90–93.
    5. 5)
      • M.W. Austin . GaAs/GaAlAs curved rib waveguides. IEEE J. Quantum Electron. , 4 , 795 - 800
    6. 6)
      • R.J. Deri , R.J. Hawkins . Polarisation, scattering, and coherent effects in semiconductor rib waveguide bends. Opt. Lett. , 10 , 922 - 924
    7. 7)
      • T.K. Tang , P.D. Swanson , M.E. Givens , T.A. Detemple , J.J. Coleman . Losses in semiconductor waveguide S bends fabricated by impurity-induced layer disordering. Opt. Lett. , 12 , 1138 - 1140
    8. 8)
      • T. Hiroaki , O. Kunishige . Very low loss GaAs/AlGaAs miniature bending waveguides with curvature radii less than 1 mm. Appl. Phys. Lett. , 2 , 87 - 89
    9. 9)
      • Austin, M.W.: `Curved optical waveguides in III-V semiconductors', 1982, Ph.D. degree thesis, University of London.
    10. 10)
      • P.W.A. Mcilroy , P.M. Rodgers , J. Singh , P.C. Spurdens , I.D. Henning . Low-loss single-mode InP/GaInAsP waveguides grown by MOVPE. Electron. Lett. , 13 , 701 - 703
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