Injection transistor logic (ITL): new bipolar low-power inverter

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Injection transistor logic (ITL): new bipolar low-power inverter

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© The Institution of Electrical Engineers
Published

We investigate the characteristics of a new injection transistor logic (ITL) fabricated by vapour-phase epitaxy and ion implantation. The maximum current gain of the Si-ITL inverter is about 150. The propagation delay tpd was determined by the ring oscillator and maximum frequency method. At a power of 100 μW per gate for this inverter, tpdis about 500 ps and 850 ps for 60 μW. In the high-speed ITL structure tpdis about 300 ps for 120 μW.

Inspec keywords: vapour phase epitaxial growth; integrated circuit technology; ion implantation; logic gates; bipolar integrated circuits; integrated logic circuits

Other keywords: vapour-phase epitaxy; propagation delay; ring oscillator; Si; characteristics; 850 to 300 ps; injection transistor logic; current gain; ion implantation; VLSI; bipolar low-power inverter; 60 to 120 muW; power dissipation

Subjects: Bipolar integrated circuits; Logic circuits; Semiconductor doping; Epitaxial growth

References

    1. 1)
      • F.M. Klaassen . Some considerations on high-speed injection logic. IEEE J. Solid-State Circuits , 2 , 150 - 154
    2. 2)
      • K. Hart , A. Slob . Integrated injection logic: A new approach to LSI. IEEE J. Solid-State Circuits , 5 , 346 - 351
    3. 3)
      • V.I. Arshinov , E.V. Vecshina . Silicon high current gain injection transistor. Microelectronics (USSR) , 5 , 472 - 474
    4. 4)
      • H. Berger , S. Wiedmann . Merged-transistor logic (MTL)-A low-cost bipolar logic concept. IEEE J. Solid-State Circuits , 5 , 340 - 346
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