W-band GaAs camel-cathode Gunn devices produced by MBE

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W-band GaAs camel-cathode Gunn devices produced by MBE

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© The Institution of Electrical Engineers
Published

The DC and microwave performance of a novel secondharmonic W-band GaAs Gunn device incorporating a camel barrier are reported. Comparison with conventional Gunn devices shows significant improvement in power output and DC to RF conversion efficiency for the new structure. The frequency at which the maximum power is produced is lower for the camel cathode Gunn device, an observation attributed to a reduction in the length of the acceleration zone.

Inspec keywords: molecular beam epitaxial growth; III-V semiconductors; gallium arsenide; Gunn diodes; microwave generation

Other keywords: GaAs; W-band; second-harmonic; semiconductors; camel-cathode Gunn devices; acceleration zone; camel barrier; microwave performance; MBE; DC to RF conversion efficiency; power output; MM-waves; EHF; maximum power frequency

Subjects: Solid-state microwave circuits and devices; II-VI and III-V semiconductors; Bulk effect devices; Epitaxial growth

References

    1. 1)
      • J.M. Woodcock , J.J. Harris . Bulk unipolar diodes in MBE GaAs. Electron. Lett. , 181 - 183
    2. 2)
      • S.M. Sze . (1981) , Physics of semiconductor devices.
    3. 3)
      • J.M. Shannon . A comparison between bulk unipolar diodes and Schottky barriers. Philips J. Res. , 239 - 258
    4. 4)
      • J.M. Shannon . A majority carrier camel diode. Appl. Phys. Lett.
    5. 5)
      • N.R. Couch , M.J. Kelly , T.M. Kerr , D.J. Knight , J. Ondria . The use of linearly graded composition AlGaAs injectors for inter-valley transfer in GaAs: theory and experiment. Solid-State Electron.
    6. 6)
      • Z. Greenwald , D.W. Woodward , A.R. Calawa , L.F. Eastman . The effect of high energy injection on the performance of mm wave Gunn oscillators. Solid-State Electron.
    7. 7)
      • H. Rees . Injection properties of contacts to InP. Inst. Phys. Conf. Ser.
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